![]() Furthermore, JP-A-2004-302699 (patent document 2) discloses a structure having a p-type GaN layer, an n-type AlGaN layer and an active layer composed of InGaN, as a light emitting layer on a sapphire substrate. For example, JP-A-2003-340835 (patent document 1) discloses a structure having a p-type GaN layer, an n-type GaN layer and an active layer composed of InGaN, as a light emitting layer on a sapphire substrate. ![]() In the thin film, at least a light emitting layer composed of a group III nitride compound semiconductor is disposed on the substrate. ![]() The group III nitride compound semiconductor light emitting device has a lamination structure of a sapphire substrate and a group III nitride compound semiconductor thin film. The present invention relates to a method for producing a group III nitride compound semiconductor light emitting device, in particular, to a method for producing a group III nitride compound semiconductor light emitting device having high light extraction efficiency.Ī group III nitride compound semiconductor light emitting device using a group III nitride compound semiconductor has been in the spotlight of attention in recent years because the group III nitride compound semiconductor is a direct transition type semiconductor light emitting device emitting light having a short wavelength. Category:Multiplayer and single-player video games1.
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